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| STP3NB80 POWER MOSFET GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode with fast recovery time. Designed for high voltage, high speed switching applications such as power supplies, converters, power motor controls and bridge circuits. FEATURES Higher Current Rating Lower Rds(on) Lower Capacitances Lower Total Gate Charge Tighter VSD Specifications Avalanche Energy Specified PIN CONFIGURATION TO- TO-220FP SYMBOL D Top View G ATE SOU RCE DRAIN G S 1 2 3 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS Rating Drain to Current Continuous Pulsed Gate-to-Source Voltage Total Power Dissipation Derate above 25 Operating and Storage Temperature Range Single Pulse Drain-to-Source Avalanche Energy Thermal Resistance Junction to Case Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8" from case for 10 seconds TJ = 25 TJ, TSTG EAS Continue Non-repetitive Symbol ID IDM VGS VGSM PD Value 3.0 12 30 40 35 0.28 -65 to 150 176 1.70 62 .300 V V W W/ ...... mJ /W Unit A (VDD = 50V, VGS = 10V, ID = 3A, L = 10mH, RG = 25 ) JC JA TL Page 1 STP3NB80 POWER MOSFET ORDERING INFORMATION Part Number STP3NB80 Package TO-220 Full Package ELECTRICAL CHARACTERISTICS Unless otherwise specified, TJ = 25 . STP3NB80 Typ Characteristic Drain-Source Breakdown Voltage (VGS = 0 V, ID = 250 A) Drain-Source Leakage Current (VDS =800 V , VGS = 0 V ) Gate-body Leakage Current (VGS = 30 V, VDS = 0 V) Gate-Source Leakage Current-Reverse (Vgsr = 20 V, VDS = 0 V) Gate Threshold Voltage (VDS = VGS, ID = 250 A) Static Drain-Source On-Resistance (VGS = 10 V, ID = 1.5A) * Forward Transconductance (VDS = ID(ON) X RDS(ON)max , ID = 1.5 A) * Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge (VDD = 400 V, ID = 1.5 A, VGS = 10 V, RG = 4.7 ) * (VDS = 640 V, ID = 3.0 A, VGS = 10 V)* (VDS = 25 V, VGS = 0 V, f = 1.0 MHz) Symbol V(BR)DSS IDSS Min 800 Max Units V A 1 IGSS IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd LD LS 1.5 445 60 7 12 10 19 10 17 6.5 7.5 4.5 7.5 580 80 9 17 14 40 20 24 3.0 2.5 100 -100 5.0 4.0 nA nA V mhos S pF pF pF ns ns ns ns nC nC nC nH nH Internal Drain Inductance (Measured from the drain lead 0.25" from package to center of die) Internal Drain Inductance (Measured from the source lead 0.25" from package to source bond pad) SOURCE-DRAIN DIODE CHARACTERISTICS Forward On-Voltage(1) Forward Turn-On Time Reverse Recovery Time (ISD = 3.0 A, dIS/dt = 100A/s) VSD ton trr ** 650 1.6 V ns ns * Pulse Test: Pulse Width 300s, Duty Cycle ** Negligible, Dominated by circuit inductance 2% Page 2 STP3NB80 POWER MOSFET Safe Operating Area for TO-220FP Thermal Impedance forTO-220FP Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Page 3 STP3NB80 POWER MOSFET Gate Charge vs Gate-source Voltage Capacitance Variations Normalized Gate Threshold Voltage vs Temperature Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics Page 4 |
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